碱性阻挡层抛光液在65nm铜布线平坦化中应用  

Application of the Alkaline Barrier Slurry on the Planarization of 65 nm Multilayer Copper Wiring

作　　者：陈蕊[1] 刘玉岭[1] 王辰伟[1] 蔡婷[1] 高娇娇[1] 何彦刚[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2013年第10期750-754,共5页Semiconductor Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);河北省自然科学基金资助项目(F2012202094)

摘　　要：阻挡层的平坦化直接决定了多层铜布线化学机械平坦化结果的好坏和器件的成品率,而阻挡层抛光液作为阻挡层平坦化的重要组成部分,其作用至关重要,研发了一种高性能的碱性阻挡层抛光液。采用在300 mm多层铜布线上进行阻挡层平坦化实验,用抛光后各测试参数与国际通用酸性阻挡层抛光液进行对比的方法进行研究。结果表明碱性阻挡层抛光液抛光后,线宽比为50μm/50μm处碟形坑大小为52.3 nm,5μm/5μm处蚀坑大小为20.8 nm,电阻为1.18 kΩ,电容为2.33 pF,铜膜表面粗糙度为0.32 nm,均满足工业要求且优于酸性抛光液结果,满足65 nm技术节点的需求。为未来28 nm及22 nm的发展提供了阻挡层抛光材料,适应巨大规模集成电路(giga scale integration,GSI)未来的发展。Planarization of barrier dominates the final quality of the whole process of multi-layers copper chemical mechanical planarization （CMP） and the yield of devices, thus barrier slurry plays an important role during barrier CMP. Focus on this issue, a high-performance alkaline barrier slurry was developed. The experiment was taken on the 300 mm multi-layered copper patterned wafer and compared with the commercial acidic barrier slurry. The results show that using the alkaline barrier slurry, dishing of 50 μm/50 μm is 52.3 nm, erosion of 5 μm/5 μm is 20.8 nm, resistance is 1. 18 kl, capacitance is 2.33 pF, surface roughness of copper film is 0.32 nm. All the parameters can satisfy the requirements of the industry, and it is better than the result of using acidic barrier slurry. The alkaline barrier slurry can meet the 65 nm technology node demand, and also can provide barrier polishing materials for the future development of 28 nm and 22 nm, which adapts to the future development of giga scale integration （GSI）.

关 键 词：巨大规模集成电路（GSI） 多层铜布线 阻挡层抛光液 碱性 酸性 

分 类 号：TN305.2[电子电信—物理电子学]