倒装焊器件封装结构设计  

Package Structure Design of Flip Chip Device

作　　者：敖国军 张国华 蒋长顺 张嘉欣 

机构地区：[1]无锡中微高科电子有限公司,江苏无锡214035

出　　处：《电子与封装》2013年第9期6-9,17,共5页Electronics & Packaging

摘　　要：倒装焊是今后高集成度半导体的主要发展方向之一。倒装焊器件封装结构主要由外壳、芯片、引脚(焊球、焊柱、针)、盖板(气密性封装)或散热片(非气密性封装)等组成。文章分别介绍外壳材料、倒装焊区、频率、气密性、功率等方面对倒装焊封装结构的影响。低温共烧陶瓷(LTCC)适合于高频、大面积的倒装焊芯片。大功率倒装焊散热结构主要跟功率、导热界面材料、散热材料及气密性等有关系。倒装焊器件气密性封装主要有平行缝焊或低温合金熔封工艺。Flip chip bonding is one of development trend of high-integrated semiconductor for the future. Flip chip device includes carrier substrate, integrated circuit, pin （solder ball, solder column, pin） , lid （hermetic package） or heat spreader （nonhermefic package） . The article describes the relation of flip chip package structure with package material, flip chip bonding area, frequency, air-tightness, power etc. Low temperature co-fired ceramic is fit for the flip chip of high frequency and large area. Power, thermal interface material, heat spreader and air-tightness determine the dissipation structure of high power flip chip. There are parallel seam welding and low temperature solder sealing for hermetic package of flip chip device.

关 键 词：倒装焊 封装结构 气密性 高频电路 大功率 

分 类 号：TN305.94[电子电信—物理电子学]