在p-Si(100)上溅射法生长ZnO的结构和光学特性  

Structure and optical properties of ZnO film grown on p-type Si(100)substrate by sputtering

作　　者：姚振钰[1] 贺洪波[2] 柴春林[1] 刘志凯 杨少延[1] 张建辉[1] 廖梅勇[1] 范正修[2] 秦复光[1] 王占国[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学实验室，北京 100083 [2]中国科学院上海光学精密机械研究所薄膜技术中心，上海 201800

出　　处：《功能材料与器件学报》2000年第4期338-341,共4页Journal of Functional Materials and Devices

基　　金：863计划资助项目(863-715-001-0162)

摘　　要：室温下在p Si(1 0 0 )上采用直流反应磁控溅射法外延生长了ZnO薄膜。XRD测量表明了ZnO是高度c轴单一取向生长的 ,XRC测量则表明了ZnO的高质量。在室温下的PL测量中见到了带边发射 ,其强度与晶体质量有关。At room temperature ZnO thin films were eptaxially deposited on p Si(100) substrate by DC reactive magnetron sputtering.The XRD patterns of ZnO films showed the sharp diffraction peaks for ZnO(0002), which indicates that the as grown films are highly C axis oriented .The X ray rocking curve(XRC) of ZnO(0002) peak showed that the high quality ZnO was obtained. The band edge emission was observed in the PL spectra at room temperature. Its intensity was related to quality of the crystal.

关 键 词：磁控溅射 ZNO薄膜 SI衬底 光学特性 XRC XRD 

分 类 号：TN304.21[电子电信—物理电子学]