SI-GaAs晶片的PL mapping表征技术  

Characterization of PL mapping for SI-GaAs wafer

作　　者：李光平[1] 汝琼娜 李静[1] 何秀坤[1] 王寿寅 陈祖祥 

机构地区：[1]信息产业部电子第四十六研究所天津55信箱,天津300192 [2]北京伯乐分析生化仪器有限公司,北京100029

出　　处：《功能材料与器件学报》2000年第4期365-368,共4页Journal of Functional Materials and Devices

摘　　要：研究了扫描光致发光光谱 (PLmapping)在表征半绝缘砷化镓 (SI GaAs)材料中的应用 ,实验结果表明SI GaAs晶片的PL强度及mapping均匀性对器件性能有着十分密切的关系 ,所以在为制备器件筛选优质的SI GaAS材料时 ,除了电阻率、迁移率、位错密度、碳含量、EL2浓度及其均匀性、晶片表面质量外 ,PLmapping也是表征材料质量的一个重要参数。In this paper, application of PL mapping to characterize SI GaAs crystal has been studied in detail. The experiment results show that PL mapping and its intensity of SI GaAs wafer plays an important role in determining the performance of device. When selecting high quality SI GaAs crystal for fabricating device, PL mapping homogeneity is an important parameter besides resistivity, mobilty, EPD, carbon concentration, EL2 concentration and their homogeneity, wafer surface quality.

关 键 词：光致发光光谱 表征材料 半绝缘砷化镓 

分 类 号：TN304.23[电子电信—物理电子学] O472.3[理学—半导体物理]