不同发射结深LPNP晶体管的抗辐照性能研究  

Study on Radiation Hardness of LPNP BJTs with Different Emitter Depths

作　　者：吕曼[1] 张小玲[1] 张彦秀 谢雪松[1] 孙江超[1] 陈成菊[1] 吕长志[1] 

机构地区：[1]北京工业大学,北京100124 [2]北京燕东微电子有限公司,北京100015

出　　处：《微电子学》2013年第4期564-567,共4页Microelectronics

摘　　要：双极晶体管的辐照总剂量效应主要表现为电流增益下降和漏电流增加。工艺相同、发射结结深不同的LPNP双极晶体管的抗辐照敏感性不同,浅发射结LPNP的抗辐照性能更强。由于离子注入前氧化层的影响,厚氧化层形成的浅发射结LPNP具有更少的注入损伤,界面态较少,同时具有高的表面杂质浓度,从而减少了辐照后发射区上方的SRH复合以及过剩基极电流的增加,提高了LPNP双极晶体管的抗辐照性能。Total-dose irradiation may cause failures in lateral PNP transistors, which usually exhibit current-gain degradation and leakage current increase. Lateral PNP bipolar transistors with identical process but different emitter depths have different sensitivity to total-dose irradiation. The lateral PNP bipolar junction transistors with deep emitters have higher initial current-gain than those with shallow emitters, but are more sensitive to ionizing radiation. Due to the influence of the oxide layer before ion implantation, a thicker oxide layer may cause shallower emitter in LPNP. Shallowly implanted emitter LPNPs have less injection damage, less interface traps, and higher impurity concentration, which reduces Shockley-Read-Hall （SRH） recombination over the emitter after irradiation and excessive base current addition, thus improving radiation hardness of LPNP bipolar transistors.

关 键 词：横向PNP 双极晶体管 总剂量辐照 

分 类 号：TN322.8[电子电信—物理电子学]