32nm节点极紫外光刻掩模的集成研制  

Integrated Development of Extreme Ultraviolet Lithography Mask at 32nm Node

作　　者：杜宇禅[1] 李海亮[1] 史丽娜[1] 李春[2] 谢常青[1] 

机构地区：[1]中国科学院微电子研究所纳米加工与新器件集成研究室,北京100029 [2]中国科学院长春光学精密机械与物理研究所,吉林长春130033

出　　处：《光学学报》2013年第10期320-326,共7页Acta Optica Sinica

基　　金：国家自然科学基金(61107032;61275170)

摘　　要：报道了国内首块用于极紫外投影光刻系统的6inch(1inch=2.54cm)标准极紫外光刻掩模。论述了32nm节点6inch标准极紫外光刻掩模的设计方案,及掩模衬底、反射层、吸收层材料的工艺特性研究,对缺陷控制及提高掩模效率的方法进行了分析。运用时域有限差分法对掩模的光学特性进行了仿真,根据仿真结果确定合适的Cr吸收层厚度。运用电子束光刻技术进行了掩模的图形生成,针对其中的电子束光刻临近效应进行了蒙特卡罗理论分析,用高密度等离子体刻蚀进行了图形转移,所制造的掩模图形特征尺寸小于100nm,特征尺寸控制精度优于20nm,满足技术设计要求。The first domestic 6 inch （1 inch=2.54 cm） extreme ultraviolet lithography （EUVL） mask for EUVL system is reported. The design of the 6 inch EUVL mask at 32 nm node is described, process characteristics of substrate materials, buffer and absorber layers are investigated in detail, and mask with low defective rate and high efficiency is designed. Suitable Cr absorber layer thickness is decided according to the optical property simulation by finite-difference time-domain （FDTD） method. Electron beam proximity effect is analyzed by using Monte Carlo simulation method. Electron beam lithography is used to generate patterns, and high density plasma etching is used to translate patterns to the Cr absorber layer and Si02 buffer layer. EUVL mask with critical dimension below 100 nm and critical dimension accuracy less than 20 nm is obtained, which meets the requirements of technical design specifications.

关 键 词：X射线光学 极紫外投影光刻 掩模 电子束光刻 32 nm节点 时域有限差分法 

分 类 号：O436[机械工程—光学工程]