Na助熔剂法生长氮化镓晶体的研究进展  

Research Progress of GaN Crystal Grown by Na Flux Method

作　　者：周明斌[1] 李振荣[1] 李静思[1] 吴熙[1] 范世马■ 徐卓[1] 

机构地区：[1]西安交通大学电子陶瓷与器件教育部重点实验室,西安710049

出　　处：《人工晶体学报》2013年第10期1983-1991,共9页Journal of Synthetic Crystals

摘　　要：以高质量GaN单晶基片作为衬底实现GaN的同质外延生长,是获得GaN半导体器件优异性能的基础。高质量GaN单晶基片的缺乏已成为国际范围制约GaN器件发展的瓶颈。在GaN体单晶的几种生长方法中,由于Na助熔剂法的生长条件相对温和且成本相对较低,近年来发展较快。本文从Na助熔剂法的原理、生长工艺、助熔剂种类以及得到晶体尺寸和质量等几方面进行了综述,分析了目前Na助熔剂法生长GaN单晶中的技术问题并提出了进一步研究的一些建议。Homoepitaxy on GaN single crystal substrates with high quality is critical to take full advantage of GaN devices. The lack of high-quality GaN single crystal substrate has become the bottleneck of further development of GaN-based devices at present in the world. Na flux method, one of the GaN single crystal growth methods, developed rapidly in recent years because of the growth relatively mild conditions and low cost. In this paper, the key technologies and the results in the growth of GaN single crystal by Na flux method were reviewed. The technical problems in the growth were pointed out and some suggestions for improvement have been proposed.

关 键 词：氮化镓 体单晶 Na助熔剂法 进展 

分 类 号：O782[理学—晶体学]