A W-band two-stage cascode amplifier with gain of 25.7 dB  

作　　者：钟英辉 张玉明 张义门 曹玉雄 姚鸿飞 王显泰 吕红亮 刘新宇 金智 

机构地区：[1]School of Microelectronics,Xidian University [2]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第12期72-76,共5页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(Nos.2010CB327502,2010CB327505);the Advance Research Project(No.5130803XXXX)

摘　　要：AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.

关 键 词：CASCODE coplanar waveguide HEMT GATE-LENGTH 

分 类 号：TN722[电子电信—电路与系统] TN241