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GATE-LENGTH: 作品数：11被引量：8H指数：1; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：和致经刘新宇吴德馨刘果果郑英奎更多>>; 相关机构：中国科学院微电子研究所中国科学院更多>>; 相关期刊：《Science Bulletin》《Journal of Semiconductors》《工程数学学报》《Journal of Central South University》更多>>; 相关基金：国家重点基础研究发展计划国家自然科学基金中国人民解放军总装备部预研基金中国科学院微电子研究所所长基金更多>>

Performance analysis of 20 nm gate-length In_(0:2)Al_(0:8)N/GaN HEMT with Cu-gate having a remarkable high I_(ON)/I_(OFF)ratio被引量：1: 《Journal of Semiconductors》2014年第6期26-31,共6页A.Bhattacharjee T.R.Lenka; ： We propose a new structure of InxAll-xN/GaN high electron mobility transistor （HEMT） with gate length of 20 nm. The threshold voltage of this HEMT is achieved as -0.472 V. In this device the InA1N barrier layer i...; 关键词：C-V characteristics DIBL GaN HEMT ION/IOFF mobility

A W-band two-stage cascode amplifier with gain of 25.7 dB: 《Journal of Semiconductors》2013年第12期72-76,共5页钟英辉张玉明张义门曹玉雄姚鸿飞王显泰吕红亮刘新宇金智; Project supported by the National Basic Research Program of China(Nos.2010CB327502,2010CB327505);the Advance Research Project(No.5130803XXXX); AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been real...; 关键词：CASCODE coplanar waveguide HEMT GATE-LENGTH

1.0μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition被引量：1: 《Journal of Central South University》2012年第12期3444-3448,共5页高成李海鸥黄姣英刁胜龙; Project(Z132012A001)supported by the Technical Basis Research Program in Science and Industry Bureau of China;Project(61201028,60876009)supported by the National Natural Science Foundation of China; InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-D...; 关键词：metamorphic device mental organic chemical vapor deposition high electron mobility transistors InP substrate INGAAS

An 88 nm gate-length In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based HEMT with f_(max) of 201 GHz被引量：1: 《Journal of Semiconductors》2012年第7期39-42,共4页钟英辉王显泰苏永波曹玉雄金智张玉明刘新宇; An 88 nm gate-length In0.53Ga0.47As/In0.52Alo.48As InP-based high electron mobility transistor （HEMT） was successfully fabricated with a gate width of 2× 50 μm and source-drain space of 2.4μm. The T-gate was defi...; 关键词：HEMT GATE-LENGTH gate recess INP InA1As/InGaAs

Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAs InP-based HEMT: 《Journal of Semiconductors》2010年第9期45-48,共4页黄杰郭天义张海英徐静波付晓君杨浩牛洁斌; supported by the Young Scientists Fund of the National Natural Science Foundation of China(No.60806024);the Fundamental Research Funds for Central University,China(No.XDJK2009C020); A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In_（0.53）Ga_（0.47）As/In_（0.52）Al_（0.48）...; 关键词：HEMT INP INGAAS/INALAS cutoff frequency T-shaped gate technology

120-nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48)As InP-based HEMT: 《Journal of Semiconductors》2010年第7期46-48,共3页黄杰郭天义张海英徐静波付晓君杨浩牛洁斌; Project supported by the National Natural Science Foundation of China(No.60806024);the Fundamental Research Funds for the Central Universities,China(No.XDJK2009C020).; 120 nm gate-length In_（0.7）Ga_（0.3）As/In_（0.52）Al_（0.48） As InP-based high electron mobility transitions（HEMTs） are fabricated by a new T-shaped gate electron beam lithograph（EBL） technology,which is achie...; 关键词：HEMT INP INGAAS/INALAS cutoff frequency T-shaped gate

200 nm gate-length GaAs-based MHEMT devices by electron beam lithography被引量：4: 《Chinese Science Bulletin》2008年第22期3585-3589,共5页XU JingBo ZHANG HaiYing WANG WenXin LIU Liang LI Ming FU XiaoJun NIU JieBin YE TianChun; the National Basic Research Program of China (Grant No. G2002CB311901);Equipment Advance Research Project (Grant No. 61501050401C);Institute of Microelectronics, Chinese Academy of Sciences, Dean Fund (Grant No. 06SB124004); GaAs-based metamorphic HEMTs (MHEMT) consist of GaAs substrates and InP-based epitaxial structure, and have the advantages of both InP HEMT's excellent performances and GaAs-based HEMT's mature processes. GaAs-based M...; 关键词：电子束 MHEMT 电流电子频率

1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs: 《Journal of Semiconductors》2008年第4期668-671,共4页徐静波黎明张海英王文新尹军舰刘亮李潇张健叶甜春; 国家重点基础研究发展规划(批准号:G2002CB311901);装备预先研究基金(批准号:61501050401C);中国科学院微电子研究所所长基金(批准号:O6SB124004)资助项目~~; 1.0μm gate-length GaAs-based MHEMTs have been fabricated by MBE epitaxial material and contact-mode lithography technology. Pt/Ti/Pt/Au and Ti/Pt/Au were evaporated to form gate metals. Excellent DC and RF performanc...; 关键词：MHEMT Pt/Ti/Pt/Au Ti/Pt/Au SPDT MMIC

0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with f_T of 77GHz被引量：1: 《Journal of Semiconductors》2006年第6期963-965,共3页郑英奎刘果果和致经刘新宇吴德馨; MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors （HEMTs） are fabricated on sapphire substrates. A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency （f...; 关键词：GAN sapphire substrate high electron mobility transistor

TWO DIMENSIONAL SIMULATION OF SHORT-GATE-LENGTH GaAs MESFET's: 《工程数学学报》1990年第2期105-113,共页; the National Scjcnce Foundation of China, Grant No:6883028; <正> The two dimensional steady stale numerical simulation system MESS for C-band power GaAs MESFET’s by finite clement method is presented in this paper. The improved charge lumping method and the hybrid fini...; 关键词：瓦子占卜协流

GATE-LENGTH