云南高校图书馆联盟文献共享服务平台- DIBL

DIBL: 作品数：16被引量：9H指数：1; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李思臻余凯陈小强向平徐跃杭更多>>; 相关机构：广东工业大学华中科技大学电子科技大学北京有色金属研究总院更多>>; 相关期刊：《Journal of Electronics Cooling and Thermal Control》《Journal of Semiconductors》《Circuits and Systems》《World Journal of Nano Science and Engineering》更多>>; 相关基金：国家自然科学基金更多>>

A review on performance comparison of advanced MOSFET structures below 45 nm technology node被引量：1: 《Journal of Semiconductors》2020年第6期19-28,共10页Namrata Mendiratta Suman Lata Tripathi; CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully integrated with ICs.Every two years the number of MOS transistors doubles because the size of the...; 关键词：MOSFET junctionless RF BIOSENSOR DIBL double gate

Investigation and Comparison of the DIBL Parameter and Thermal Effects of SOD Transistors and SOI Transistors and Improving Them with the Change of Their BOX Thicknesses: 《Journal of Electronics Cooling and Thermal Control》2018年第2期19-30,共12页Nooshien Laderian Arash Daghighi; In this paper, thermal effects and Drain Induced barrier lowering (DIBL) of silicon-on-insulator (SOI) and silicon-on-diamond (SOD) transistors with 22 nm channel lengths using hydrodynamic simulations have been inves...; 关键词：Silicon-on-Diamond SILICON-ON-INSULATOR SELF-HEATING Off Current DIBL

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation: 《Chinese Physics B》2018年第2期619-624,共6页张梦映胡志远毕大炜戴丽华张正选; Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147);the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100); Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...; 关键词：partiallydepleted silicon-on-insulator（PD SOI） totalionizingdose（TID） radiationinduced narrow channel effect（RINCE） drain induced barrier lowering（DIBL） effect

Impact of underlap spacer region variation on electrostatic and analog perform-ance of symmetrical high-k SOI FinFET at 20 nm channel length: 《Journal of Semiconductors》2017年第12期13-21,共9页Neeraj Jain Balwinder Raj; Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short c...; 关键词：SOI FinFET SCEs underlap region DIBL analog and RF performance

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications被引量：5: 《Journal of Semiconductors》2017年第6期52-57,共6页D.K.Panda T.R.Lenka; TEQIP-II funded Silvaco TCAD;SMDP-II funded Cadence Tool in Department of Electronics and Communication Engineering,NIT Silchar for carrying out the research work; An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Sp...; 关键词：CLM DIBL GaN HEMT SPST VERILOG-A

28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II: 《Circuits and Systems》2017年第5期111-121,共11页Ali Mohsen Adnan Harb Nathalie Deltimple Abraham Serhane; This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is go...; 关键词：UTBB FD-SOI: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator Tri-Gate FINFET DIBL: Drain Induced Barrier Lowering

Performance analysis of SiGe double-gate N-MOSFET: 《Journal of Semiconductors》2017年第4期38-44,共7页A.Singh D.Kapoor R.Sharma; The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate（SG） MOSFETs but also provides the better replacement for future technology.In this paper...; 关键词：double gate MOSFET DIBL GIDL volume inversion SiGe Genius tool

28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I: 《Circuits and Systems》2017年第4期93-110,共18页Ali Mohsen Adnan Harb Nathalie Deltimple Abraham Serhane; Nowadays, transistor technology is going toward the fully depleted architecture;the bulk transistors are becoming more complex in manufacturing as the transistor size is becoming smaller to achieve the high performanc...; 关键词：UTBB FD-SOI: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator Tri-Gate FINFET DIBL: Drain Induced Barrier Lowering

Performance analysis of charge plasma based dual electrode tunnel FET被引量：1: 《Journal of Semiconductors》2016年第5期35-42,共8页Sunny Anand S.Intekhab Amin R.K.Sarin; This paper proposes the charge plasma based dual electrode doping-less tunnel FET （DEDLTFET）. The paper compares the device performance of the conventional doping-less TFET （DLTFET） and doped TFET （DGTFET）. DEDL...; 关键词：band to band tunneling （BTBT） charge plasma doping-less tunnel field effect transistor （DLTFET） average subthreshold swing drain induced barrier lowering （DIBL）

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values: 《Chinese Physics B》2015年第2期362-367,共6页马晓华张亚嫚王鑫华袁婷婷庞磊陈伟伟刘新宇; supported by the Program for New Century Excellent Talents in University(Grant No.NCET-12-0915);the National Natural Science Foundation of China(Grant Nos.61334002 and 61204086); In this paper,the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors（HEMTs）,featuring a 50-nm and a 150-nm GaN thick channel layer,respectively,are compared.The HEMT wi...; 关键词：AlGaN/GaN HEMTs GaN channel layer thickness off-state breakdown DIBL

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