SOI基纳米硅薄膜超微压压力传感器研究  

Research of nano-silicon thin film ultra-miniature pressure sensor based on SOI

作　　者：许高斌[1] 李凌宇[1] 陈兴[1] 马渊明[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院安徽省MEMS工程技术研究中心,合肥230009

出　　处：《电子测量与仪器学报》2013年第12期1107-1113,共7页Journal of Electronic Measurement and Instrumentation

基　　金：国家“863”计划(2013AA041101)资助项目;安徽省科技攻关计划(10120106005)资助项目

摘　　要：设计分析了一种SOI基纳米硅薄膜的压阻式压力传感器，构建SOI埋层氧化层、SOI上层硅和A1N绝缘层多层压力敏感薄膜结构。利用纳米硅薄膜作为压敏电阻，AIN薄膜作为绝缘层，埋层氧化层自停止腐蚀制作压力空腔。该传感器的制备工艺简单，一致性、重复性好。通过ANSYS模拟分析了压力敏感层结构参数对传感器灵敏度的影响以及传热特性，验证了结构设计和理论模型的正确性和合理性。研究表明，该传感器灵敏度可达到1．3mV／（kPa·V），输出电压可达到0．65mV，且具有较好的线性度和高温性能，可实现对0—100Pa超微压的测量。Based on SOI, a novel nano-silicon thin film ultra-miniature pressure sensor is designed, the pressure sensitivity layer is composed of SOI buried oxide（BOX） , top-Si and AIN films. Using the nano-silicon thin film as piezoresistance, the AIN as insulation layer, and the BOX as the etch-stop layer, the pressure cavum is fabricated. The fabrication process of the sensor is simple with well consistency and repeatability. The design and the model are verified by using the FEM tool ANSYS. The sensitivity of the sensor affected with the structural parameters of the pressure sensitivity layer and the heat transfer characteristic are also analyzed. The simulation results show that the sensitivity of the sensor can achieve to 1.3 mV/kPa·V, and the output voltage of Wheatstone bridge can achieve to 0.65 inV. Thus, the pressure sensor has good linearity and high temperature performance, so it is suitable for measurement of the ultraminiature pressure 0 to 100 Pa.

关 键 词：SOI 纳米硅薄膜 超微压 压力传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN306[自动化与计算机技术—控制科学与工程]