衬底对CVD生长石墨烯的影响研究  

SUBSTRATES FOR CVD GROWTH OF GRAPHENE RESEARCH

作　　者：张玮[1] 满卫东[1] 涂昕[1] 林晓棋 

机构地区：[1]武汉工程大学 湖北省等离子体化学与新材料重点实验室,武汉430073

出　　处：《真空与低温》2013年第4期195-202,213,共9页Vacuum and Cryogenics

摘　　要：石墨烯有独特的结构和优异的性能,在电子、信息、能源、材料和生物医药等领域都有着广阔的应用前景。为了更好的应用这种新型材料,如何大规模可控合成高质量石墨烯是一个必须克服的困难。相比与机械剥离法、化学氧化还原法和碳化硅表面外延生长法,化学气相沉积法(CVD)因其可以生长大面积高质量连续石墨烯膜而倍受关注。基于石墨烯的生长机理,从衬底材料的角度,综述了近几年衬底对CVD生长石墨烯的影响的研究进展。展望了衬底选择的发展新趋势。Graphene has a unique structure and excellent properties. It has broad application prospects in electronicsI infor- mation, energy, materials and biomedicine and other fields. For a better application of this new material, how large quality- controlled synthesis of grapheme is a necessary overcome difficulties. Compared with the mechanical exfoliation, chemical ox- idation-reduction and epitaxial growth on SiC, chemical vapor deposition （ CVD ） method has been receiving significant atten- tion because of it can grow high-quality large-area grapheme films. Based on the growth mechanism of grapheme i the recent substrates for CVD growth of grapheme research from the perspective of the substrate material is reviewed. Finally, the devel- opment of new trends in substrate selection are prospected.

关 键 词：石墨烯 化学气相沉积 衬底 生长机理 

分 类 号：O782.7[理学—晶体学]