影响HEMT高频特性的因素分析  

An analysis of the factors affecting frequency characteristics of HEMT

作　　者：龚仁喜[1] 孟小碧[1] 

机构地区：[1]广西大学电气工程学院,广西南宁530004

出　　处：《宝鸡文理学院学报（自然科学版）》2000年第4期276-279,共4页Journal of Baoji University of Arts and Sciences(Natural Science Edition)

摘　　要：在已建立模型的基础上 ,分析了 Al Ga As/Ga As HEMT的几个重要参数 (栅长、栅宽、掺杂Al Ga As层的厚度、未掺杂 Al Ga As层的厚度、Al Ga As层掺杂浓度、栅压、漏压 )Based on the model early established, an analysis of the several important factors (length of gate, width of gate, thickness of doped AlGaAs layer, thickness of undoped AlGaAs layer, doped concentration of AlGaAs layer, gate bias voltage and drain bias voltage) affecting frequency characteristics of high electron mobility transistor(HEMT) has been performed.

关 键 词：HEMT 高频特性 高电子迁移率晶体管 影响因素 栅长 漏压 栅宽 栅压 

分 类 号：TN386.01[电子电信—物理电子学]