SOI电路可靠性筛选技术及失效机理研究  

Study on Reliability Screening Technology and Failure Mechanism of SOI Circuits

作　　者：黄龙[1] 刘迪[1] 陆坚[2] 顾晓峰[1] 

机构地区：[1]轻工过程先进控制教育部重点实验室,江南大学电子工程系,江苏无锡214122 [2]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2013年第12期30-34,共5页Electronics & Packaging

基　　金：中央高校基本科研业务费专项资金(JUSRP1026;JUDCF13032);江苏省普通高校研究生创新计划(CXLX13_747);江苏高校优势学科建设工程资助项目(PAPD)

摘　　要：可靠性筛选是提高电子产品良率的重要技术手段。针对绝缘体上硅(SOI)技术日益广泛的应用,通过大量实验研究了SOI电路的常用筛选试验,并对失效样品进行了相应的失效机理研究。首先讨论了SOI电路失效模式和筛选方法之间的关系;其次,针对三款SOI电路分别开展了老炼应力、高温贮存及恒定加速度试验来进行可靠性筛选;最后,利用光发射显微镜、扫描电子显微镜、聚焦离子束和激励源诱导故障测试等失效分析手段,对失效样品进行了失效模式及机理分析,揭示了失效根源,为改进工艺、提高SOI电路可靠性提供了依据。Reliability screening is the important technology to improve the yield of electronic products. With the increasing applications of the silicon-on-insulator （SOI） technology, various reliability screening tests have been examined to analyze the failure mechanism of failed SOI samples. The relation between failure modes and screening methods are discussed first. The bum-in screening test, the high temperature storage test and the constant acceleration test are then performed on three different SOI circuits for reliability screening, respectively. Finally, failure analysis techniques such as emission microscopy, scanning electron microscopy, focused ion beam and stimulus induced fault testing, are used to investigate the corresponding failure mode and failure mechanism. The explored failure reasons can help to improve the process technology and the reliability of SOl circuits.

关 键 词：可靠性筛选 绝缘体上硅 失效分析 光发射显微镜 激励源诱导故障测试 

分 类 号：TN306[电子电信—物理电子学]