高耐压Si基GaN功率电子器件  

High Breakdown Voltage Gallium Nitride Power Electronic Devices on Si Substrate

作　　者：管邦虎[1,2] 孔岑[1] 耿习娇[1] 陆海燕[1] 倪金玉[1] 周建军[1] 孔月婵[1] 冯军[2] 陈堂胜[1] 

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016 [2]东南大学射频与光电集成电路研究所,南京210096

出　　处：《固体电子学研究与进展》2013年第6期505-508,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61106130);江苏省科技支撑资助项目(BE2012007);江苏省自然科学基金资助项目(BK2012516)

摘　　要：基于Si基GaN HEMT材料制作了击穿电压530V、无场板的功率电子器件。器件制作工艺与现有GaN微波功率器件工艺兼容。研究了器件栅漏间距与击穿电压的关系。器件栅宽为100μm,栅漏间距为15μm时,得到的GaN HEMT器件击穿电压530V,最大电流密度536mA/mm。器件的特征通态电阻为1.54mΩ·cm2,是相同击穿电压Si MOSFET器件特征通态电阻的二十五分之一。所制作的6mm栅宽器件击穿电压400V,输出电流2A。该器件的研制为制作低成本GaN HEMT功率器件奠定了基础。GaN high electron mobility transistor （HEMT） with breakdown voltage of 530 V without field plate was fabricated on silicon substrate. The fabrication processes are compatible with the processes of GaN HEMT for microwave application. The distance between drain and gate （Lgd） has a greater impact on breakdown voltage of the device. A breakdown voltage of 530 V with maximum current density of 536 mA/mm was obtained while Lgd was 15 μm and the gate width （Wg） was 100 μm. The specific on-state resistance of the devices was 1. 54 mΩ· cm^2, which was 25 times lower than that of silicon MOSFET with the same breakdown voltage. A breakdown voltage of 400 V and output current of 2 A were obtained while the Wg of the device were 6 mm, respectively. The results lay the foundation of low cost GaN HEMT power electron-ic devices.

关 键 词：硅基氮化镓 功率电子器件 击穿电压 

分 类 号：TN386[电子电信—物理电子学]