中红外半导体激光器GaSb基材料的刻蚀研究  

Etching of GaSb-based materials of mid-infrared semiconductor laser

作　　者：田超群[1] 魏冬寒[1] 刘磊[1] 高婷[1] 赵博[1] 李辉[1] 曲轶[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《红外与激光工程》2013年第12期3363-3366,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金(60976044)

摘　　要：锑化物半导体激光器在中红外波段具有广泛的应用前景。针对目前GaSb基材料的刻蚀工艺存在的问题,对现有的GaSb基材料的湿法刻蚀工艺进行了改进,实验分别用氢氟酸系和磷酸系对GaSb材料进行湿法刻蚀,并在两种酸系溶液中分别加入酒石酸进行对比试验。实验分析表明,这两种腐蚀液对GaSb材料都有较好的刻蚀效果,腐蚀速率稳定,适当调整腐蚀液组分可以调控腐蚀速率,刻蚀后形貌良好,材料表面平整光滑。其中氢氟酸系加入酒石酸后随着溶液稀释比的增加,刻蚀速率下降先快后慢,最后几乎不变化;磷酸系加入酒石酸后通过调整体系组分可以减轻湿法刻蚀工艺中广泛存在的下切效应以及钻蚀现象。Antimonide semiconductor lasers have a wide range of applications in the mid-infrared band. Based on the exist problems of GaSb-based material of the etching process, then the improvement was made. The hydrofluoric acid and phosphoric acid was used to make wet etching on GaSb respectively, and tartaric acid was added into the two acid-based solution to compare the effects. The experimental analysis shows that both of the two etching solution have a good etching effect on GaSb material, and the rate of corrosion is stable. The adjustments of the etching solution component can regulate the corrosion rate, and after etching, the morphology is good, and the material surface is smoothy. With the increase of the diluting ratio of the solution, the etch decline rate of hydrofluoric acid which add tartaric acid is fast then slow down, until it almost does not change any more. By adjusting the system components of Phosphate which add tartaric acid can reduce the widely exists undercut effect as well as the undercut phenomenon in the wet etching process.

关 键 词：湿法刻蚀 GASB 氢氟酸 酒石酸 

分 类 号：O472.1[理学—半导体物理]