半导体用高利用率长寿命溅射靶材的研制  

Research and Preparation of High Utilization Rate and Long-Life Sputtering Target Used in Semiconductor

作　　者：何金江[1] 万小勇[1] 周辰[1] 李勇军[1] 熊晓东[1] 王兴权[1] 

机构地区：[1]北京有色金属研究总院有研亿金新材料股公有限公司,北京100022

出　　处：《半导体技术》2014年第1期71-77,共7页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2011ZX02705-004;2014ZX02501-011)

摘　　要：半导体制造工艺中使用的高纯金属溅射靶材的利用率直接关系到靶材自身的使用寿命和芯片制作的成本，在靶材研制中需要重点关注。以晶圆制造中广泛应用的高纯铝、铜等靶材为例，介绍了溅射靶材的发展演变，并以靶材使用前后轮廓测量为基础，研究了100～300mm晶圆制造用靶材的利用率。结果表明，常规靶材随着尺寸增加和溅射工艺的严格控制，靶材利用率减小（〈30％）。制备高利用率的大尺寸长寿命靶材，需对靶材的溅射面形貌和靶材厚度等方面进行结构优化设计，经优化设计后的靶材利用率最大可达到50％以上，使用寿命亦显著延长。The utilization rate of high-purity sputtering target used for semiconductor manufacturing process is directly related to the target＇ s own life time and the cost of the chip fabrication. It is important to pay attention to the utilization problem during target manufacturing. The development of sputtering target application was reviewed and the utilization rate of A1 and Cu targets from 100 mm to 300 mm wafer manufacturing were investigated through the analysis on profiles of new and spent targets. The results show that the utilization rates of conventional targets are less than 30% with the increased target sizes and strict technological requirements. After structural optimization design of sputtering surface morphology and target thickness, the utilization rate of the large size target can reach more than 50% with significantly long life time.

关 键 词：溅射靶材 半导体 靶材设计 利用率 长寿命 

分 类 号：TN304[电子电信—物理电子学]