硅电容微差压敏感器件封装工艺研究  

Study on Packaging Technology of Silicon Capacitive Micro-Differential Pressure Sensitive Device

作　　者：李颖[1] 张治国[1] 张娜[1] 刘剑[1] 周磊[1] 张哲[1] 

机构地区：[1]沈阳仪表科学研究院有限公司,辽宁沈阳110043

出　　处：《仪表技术与传感器》2013年第12期138-140,共3页Instrument Technique and Sensor

摘　　要：文中从应用开发MEMS产品的实用角度出发,介绍硅电容微差压敏感器件的封装工艺技术。文中给出了该器件的工作原理及结构特点,从封装的角度论述了固定极板的加工技术,并结合该器件的结构特点,讨论了适于小间隙、微结构芯片封装的等电位静电封接、双面同时静电封接等关键技术。该工艺技术已成功应用于硅电容微差压传感器的研制,效果良好,在结构型力敏器件的研制领域具有很好的推广应用价值。Abstract ：Electronic device packaging technologies are very important in MEMS products application. The packaging technolo- gies ,working principle and structure characteristic of the silicon capacitive micro-differential pressure sensitive device were intro- duced in this paper. The fixed plate processing technology, the equipotential electrostatic sealing technology suit for small gap, mi- crostructure chip and the technology of the electrostatic sealed Simultaneously on both sides of the chip were discussed. The tech- nology has been successfully applied to the development of the silicon capacitive differential pressure sensor and it has a promotion- al and application value in the development of the structural force-sensitive device.

关 键 词：硅电容 微差压 敏感器件 封装工艺 

分 类 号：TP272[自动化与计算机技术—检测技术与自动化装置]