氧化铝薄膜对硫钝化InP材料光学稳定性的影响  

The Influence of Al_2O_3 Films on the Optical Stability of S-passivated InP

作　　者：田珊珊[1] 魏志鹏[1] 赵海峰 高娴[1] 方铉[1] 唐吉龙[1] 楚学影[1] 方芳[1] 李金华[1] 王晓华[1] 李梅[1] 马晓辉[1] 

机构地区：[1]长春理工大学理学院,长春130022 [2]长春光学精密机械与物理研究所,发光学及应用国家重点实验室,长春130033

出　　处：《材料导报》2013年第24期18-21,共4页Materials Reports

基　　金：国家自然科学基金(61006065;61076039;61204065;61205193;10804071);高功率半导体激光国家重点实验室基金(9140C310101120C031115);高等学校博士学科点专项科研基金(201022216110002;20102216110001;20112216120005);吉林省科技发展计划(20090139;20090555;20121816;201201116);吉林省教育厅项目(2011JYT05;2011JYT10;2011JYT11)

摘　　要：利用原子层沉积法(ALD)在硫钝化后的n型InP表面沉积Al2O3薄膜进行二次钝化处理。通过光致发光(PL)测试和原子力显微镜(AFM)测试对样品的光学性质及表面形貌进行表征。硫钝化能够有效降低样品的表面态密度及无辐射复合几率,因此样品PL发光强度得到了极大提高。而样品表面的Al2O3可防止钝化层被氧化,尽管相对于沉积Al2O3薄膜前样品的光致发光强度有所降低,但样品的稳定性得到了改善,因此可进一步提高样品的发光性能。Al2O3 films were deposited on the surface of sulfur （S）-passivated n-type InP using atomic deposi- tion （ALD）. The optical properties and surface morphology of the treatments on InP were investigated by photolumi- nescence （PL） measurement and atomic force microscopy （AFM） measurement. The surface states density and nonra- diative recombination velocity were reduced effectively with the S-treatment and thus the PL intensity was enhanced greatly. While the Al2O3 films could prevent the passivation layer from being oxidized, although the PL intensity de- creased compared with the uncoated samples, but the stability of the coated samples was improved, and therefore the luminescent properties of the samples can be further enhanced.

关 键 词：INP 光致发光 硫钝化 表面态密度 AL2O3 薄膜 

分 类 号：TN304.23[电子电信—物理电子学] O472.1[理学—半导体物理]