IC封装基板超高精细线路制造工艺进展  

Develop of manufacture techniques of IC package substrate ultra-fine lines

作　　者：周文木[1] 徐杰栋[1] 吴梅珠[1] 吴小龙[1] 刘秋华[1] 

机构地区：[1]江南计算技术研究所,江苏无锡214083

出　　处：《电子元件与材料》2014年第2期6-9,15,共5页Electronic Components And Materials

基　　金：国家科技重大专项课题资助项目(No.2011ZX02709-002)

摘　　要：概述了目前超高精细线路制作的减成法、加成法、半加成法。针对减成法在倒装芯片球栅阵列封装和倒装芯片级封装积层精细线路制造中存在的缺点,重点介绍了超高精细线路半加成及改进的半加成工艺,并从精细线路制造角度分析了曝光、快速蚀刻等关键流程,展望了后续超高精细线路半加成工艺的发展方向。Conventional subtractive process, additive process and semi-additive process are introduced contrastively. For the unavoidable disadvantages of subtractive process in manufacturing fine lines of Flip-Chip BGA and Flip-Chip CSP, the semi-additive process and a modified versions of the semi-additive process are expound. Key processes of semi-additive process, such as exposure, flash etching, etc. are also analyzed. Future trend of ultra-fine lines development is also covered in the end.

关 键 词：IC封装基板 超高精细线路 综述 半加成法 图形转移 曝光 快速蚀刻 

分 类 号：TN454[电子电信—微电子学与固体电子学]