化学镀铜对厚膜敷铜陶瓷基板敷铜层的影响  

Effect of electroless copper plating on copper film of thick film ceramic substrate coated copper

作　　者：张鹏飞[1] 傅仁利[1] 钱斐[1] 方军[1] 蒋维娜[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《电子元件与材料》2014年第2期39-42,共4页Electronic Components And Materials

基　　金：广东省战略新兴产业核心技术攻关项目资助(No.2011A091103002)

摘　　要：通过化学镀铜对厚膜敷铜陶瓷基板敷铜层进行致密化处理,采用SEM、XRD、导电性测试和结合力测试研究了化学镀铜对敷铜层结构和性能的影响。结果表明:基板敷铜层经化学镀铜处理后,孔洞深度明显变浅、平均孔径由10μm下降为3μm;表面铜层和中间层结合得更加紧密,敷接强度增加了143.6 N/cm2。同时,基板敷铜层的表面方阻由4.30 mΩ/□下降至3.02 mΩ/□,敷铜层的导电性能增强。Densification on the copper film of thick film ceramic substrate coated copper was processed by electroless copper plating. Microstructures of the copper films before and after plating treatment were studied by SEM and XRD. The adhesion strength and electrical conductivity of copper films before and after plating treatment were measured. The results indicate that after the densitifation process, the hole depth on copper film decreases obviously and the average hole diameter decreases from 10 Ωm to 3 Ωm. The copper film on the surface combines more closely with the middle layer. The adhesion strength increases by 143.6 N/cm2. The surface sheet resistance of copper film reduces from 4.30 mΩ/o to 3.02 mΩ/o. Electrical conductivity of the copper film improves clearly.

关 键 词：敷铜陶瓷基板 敷铜层 化学镀铜 致密化 敷接强度 导电性 

分 类 号：TQ153.14[化学工程—电化学工业]