总剂量辐照下沟道长度对部分耗尽绝缘体上硅p型场效应晶体管电特性的影响  

Influence of channel length on PD SOI PMOS devices under total dose irradiation

作　　者：刘红侠[1] 王志[1] 卓青青[1] 王倩琼 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2014年第1期262-267,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61076097,11235008);中央高校基本科研业务费专项资金(批准号:20110203110012)资助的课题~~

摘　　要：本文通过实验研究了0.8μm PD(Partially Depleted)SOI(Silicon-On-Insulator)p型Metal-oxidesemiconductor-feld-efect-Transistor(MOSFET)经过剂量率为50 rad(Si)/s的60Coγ射线辐照后的总剂量效应,分析了沟道长度对器件辐照效应的影响.研究结果表明:辐照总剂量相同时,短沟道器件的阈值电压负向漂移量比长沟道器件大,最大跨导退化的更加明显.通过亚阈值分离技术分析得到,氧化物陷阱电荷是引起阈值电压漂移的主要因素.与长沟道器件相比,短沟道器件辐照感生的界面陷阱电荷更多.This paper mainly investigates the total dose irradiation efects on 0.8 μm PD SOI PMOS devices which are exposed to60Co γ-rays at a dose rate of 50 rad（Si）/s.The channel length dependence of SOI PMOS devices at total dose irradiation is investigated.The result shows that the threshold voltage shift is only a little larger for shorter channel devices at the same total dose.However,the degradation of maximum transconductance for shorter channel devices is more signifcant.We found that the oxide-trapped charge is the main factor impacting the threshold drift.We may conclude that a short channel device can produce more interface trapped charges by using the subthreshold separation technology.

关 键 词：总剂量辐照 阈值电压漂移 跨导退化 界面陷阱电荷 

分 类 号：TN386[电子电信—物理电子学]