累积剂量影响静态随机存储器单粒子效应敏感性研究  

Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory

作　　者：肖尧[1] 郭红霞[1,2] 张凤祁[1] 赵雯[1] 王燕萍[1] 丁李利[1] 范雪[3] 罗尹虹[1] 张科营[1] 

机构地区：[1]强脉冲辐射环境模拟与效应国家重点实验室,西北核技术研究所,西安710024 [2]中国科学院新疆理化技术研究所,乌鲁木齐830011 [3]电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《物理学报》2014年第1期379-384,共6页Acta Physica Sinica

基　　金：电子薄膜与集成器件国家重点实验室(批准号:KFJJ201306)资助的课题~~

摘　　要：本文利用60Coγ源和兰州重离子加速器,开展不同累积剂量下,静态随机存储器(static random access memory,SRAM)单粒子效应敏感性研究,获取不同累积剂量下SRAM器件单粒子效应敏感性的变化趋势,分析其辐照损伤机理.研究表明,随着累积剂量的增加,SRAM器件漏电流增大,影响存储单元低电平保持电压、高电平下降时间等参数,导致"反印记效应".研究结果为空间辐射环境中宇航器件的可靠性分析提供技术支持.The single event efect sensitivity of static random access memory（SRAM） under diferent cumulative dose were carried out using60Co γ source and heavy ions.The trend of sensitivity was obtained and the radiation damage mechanism was analyzed theoretically.This investigation shows that the variation in single event upset cross section with increasing accumulated dose appears to be consistent with the radiation-induced leakage current originating in the memory cells that afects the parameters such as low-level hold voltage and high-level fall time and induces ＂con-imprint efect＂.Results obtained support the reliability analysis of the aerospace devices in space radiation environment.

关 键 词：累积剂量 单粒子效应 静态随机存储器 反印记效应 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]