槽栅PMOSFET沟道杂质浓度对其特性影响  

Simulation study of the influence of the channel doping density on the characteristics of the deep sub micron grooved gate PMOSFET

作　　者：任红霞[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《西安电子科技大学学报》2001年第1期8-12,56,共6页Journal of Xidian University

基　　金：国家部委预研基金资助项目! (99J 1 1 DZD132 )

摘　　要：利用二维器件仿真软件MEDICI,基于动力学能量输运模型对沟道掺杂浓度不同的深亚微米槽栅PMOSFET的特性进行了研究 ,并与相应平面器件的特性进行了对比 .研究发现 ,随着沟道掺杂浓度的提高 ,与平面器件相同 ,槽栅器件的阈值电压提高 ,漏极驱动能力降低 ,抗热载流子效应增强 ;但与平面器件相比 ,槽栅器件的阈值电压受沟道杂质浓度影响较小 ,漏极驱动能力随沟道杂质浓度提高的退化则较平面器件严重 ,抗热载流子能力的增强较平面器件大得多 .因此在基本不影响其他特性的条件下 。Based on the hydrodynamic energy transport model, the influence of the channel doping density on the performance for the deep-sub-micron grooved-gate PMOSFET is studied using the two-dimensional device simulator MEDICI and compared to that of the counterpart conventional planar device. For the grooved-gate PMOSFET, the study results prove that with the increase of channel doping density, the threshold voltage increases, the drain current driving ability decreases, and the hot-carrier-effect is suppressed, as in the planar device. But compared with the planar device, in the grooved gate PMOSFET, the influence of channel doping density on threshold voltage is smaller than in the planar device, the degradation of drain current driving ability induced by the increase of channel doping density is more intense than in the planar device, and the suppression of hot-carrier-effect is much larger than in the planer device. So the drain current ability can be developed by decreasing the channel doping density with other performance almost not influenced.

关 键 词：槽栅PMOSFET 沟道杂质浓度 阈值电压 热载流子效应 

分 类 号：TN386.1[电子电信—物理电子学]