高功率密度自对准结构AlGaAs/GaAs异质结双极晶体管  

Self-Aligned Structure AlGaAs/GaAs HBT with High Power Density

作　　者：严北平[1] 张鹤鸣[1] 戴显英[1] 

机构地区：[1]西安电子科技大学微电子学研究所,西安710071

出　　处：《Journal of Semiconductors》2001年第2期247-250,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 !(No.696760 3 3 )&&

摘　　要：利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频率 fmax大于 5 0 GHz,连续波功率测量表明 :在 1d B增益压缩时 ,单指 HBT可以提供 10 0 m W输出功率 ,对应的功率密度为 6 .6 7W/ m m,功率饱和时最大输出功率 112 m W,对应功率密度为 7.48W/ m m,功率附加效率为 6 7%A self aligned technology has been developed and applied to AlGaAs/GaAs heterojunction bipolar transistors using wet etch and sidewall techniques.The DC current gain is more than 20,the current gain cutoff frequency, f T,is more than 30GHz and the maximum oscillation frequency, f max ,is more than 50GHz.The CW power measurements show that output power of 100mW(output power density:6 67mW/mm)with power added efficiency(PAE)of 61 4% at 1dB gain compression has been achieved from a single finger HBT and that output power of 112mW(output power density:7 48mW/mm)with PAE of 67% can be achieved at the power saturated point.

关 键 词：自对准结构 高功率密度 异质结双极晶体管 ALGAAS/GAAS 砷化镓 

分 类 号：TN322.8[电子电信—物理电子学]