氧等离子体处理条件对聚硅烷制备SiO_2/Si结构平带电压的影响  

Influence of treatments on the flat-band voltage of SiO_2/Si structure from polysilane by O_2-plasma

作　　者：向少华[1] 谢茂浓[2] 张明高[2] 廖伟[2] 彭志坚[3] 傅鹤鉴[3] 

机构地区：[1]怀化师专物理系,湖南怀化418000 [2]四川大学物理系,四川成都610064 [3]四川大学化学系,四川成都610064

出　　处：《半导体技术》2001年第1期57-59,共3页Semiconductor Technology

基　　金：国家自然科学基金!(29771024)

摘　　要：氧等离子体处理高阻Ｐ型（１００）硅片上的聚硅烷涂层制备ＳｉＯ_２／Ｓｉ结构。其ＭＯＳ结构平带电压随氧等离子体处理时间、反应室气压、射频功率等条件的改变而变化，平带电压最小可达－０．５５～－０．８８Ｖ，比同一环境热氧化制备的ＳｉＯ_２／Ｓｉ结构平带电压小得多。The SiO2/Si structure was formed when ploysilane coating on Si substrate was treated by O2-plasma method. The flat-band voltage was measured by the conventional MOS capacitance method. The results showed that the flat-band voltage was dependent on the conditions of O2-plasma such as reactant pressure, treatment time and radio-frequency power. When an optimal treatment condition was selected, it was up to a minimal value in the range of --0.55^-0.88V, which was less than that of SiO2/Si structure by thermal oxidation under the same experimental environment.

关 键 词：氧等离子体 聚硅烷涂层 平带电压 二氧化硅/硅结构 

分 类 号：TN304.21[电子电信—物理电子学]