基区As组分缓变对InP/InGaP/GaAsSb/InP DHBT热电性能的影响  

Effect of As Composition Gradient on Thermoelectric Characteristics of InP /InGaP /GaAsSb /InP Double Heterojunction Bipolar Transistor

作　　者：周星宝 周守利[1,2] 

机构地区：[1]浙江工业大学信息工程学院,杭州310023 [2]中国科学院国家空间科学中心,北京100190

出　　处：《半导体技术》2014年第2期119-123,共5页Semiconductor Technology

基　　金：浙江省自然科学基金资助项目(LY12F04003);现代通信与网络系统科技创新自主设计项目(2010R50011-13)

摘　　要：基于非等温能量平衡传输模型,利用SILVACO/ATLAS数值计算软件,研究了四种不同基区As组分的缓变对InP/InGaP/GaAsSb/InP双异质结双极晶体管(DHBT)热电特性的影响。结果表明,As组分缓变的引入改善了器件的直流增益和特征频率,但同时器件内部温度也随之升高。直流增益和温度增加的速率随As组分缓变范围增大而增大,特征频率增加的速率随As组分缓变范围的增加而迅速减小。基区As组分为0.57至0.45由发射区侧到集电区侧线性分布的器件具有较高的增益和特征频率及较低的器件内部温度,增益、特征频率与器件内部温度得到了优化。Based on the nonisothermal energy balance model and used the SILVACO/ATLAS device simulator, the effects of four different types of As composition gradient of the base on the thermoelectric characteristics of InP/InGaP/GaAsSb/InP double heterojunction bipolar transistor （DHBT） were investigated. The results show that the current gain and cut-off frequency are improved due to the introduction of As composition gradient, but the temperature is also raised. The increasing rates of the current gain and temperature are higher with a larger percentage range of As composition, while the increasing rate of cut- off frequency is lower. The device with the percentage of As composition between 0.57 and 0.45 from emitter side to collector side has a relative high current gain, cut-off frequency and low bulk temperature, which presents a good trade-off among current gain and cut-off frequency as well as bulk temperature distribution.

关 键 词：INP INGAP GAASSB INP 双异质结双极晶体管(DHBT) 缓变发射结 缓变基区 热电特性 

分 类 号：TN304.26[电子电信—物理电子学]