不同磨料对蓝宝石CMP的影响  

Effects of Different Abrasives on the Sapphire CMP

作　　者：赵云鹤[1] 檀柏梅[1] 牛新环[1] 甄加丽 郭倩[1] 

机构地区：[1]河北工业大学微电子研究所,天津300401

出　　处：《微纳电子技术》2014年第2期120-125,共6页Micronanoelectronic Technology

基　　金：河北省自然科学基金资助项目(E2013202247);河北省教育厅基金资助项目(2011128)

摘　　要：在化学机械抛光(CMP)系统中,磨料是决定去除速率和表面状态的重要因素。在单一磨料下进行了单因素实验,在不同的压力、转速、流量和温度下对比了SiO2磨料和Al2O3磨料对蓝宝石去除速率及表面状态的影响;同时也探究了混合磨料对蓝宝石去除速率的影响。研究表明,在单一磨料的CMP实验中,当压力为4 psi(1 psi=6 894.76 Pa)、转速为80 r/min、流量为70 mL/min和温度为35℃时,SiO2磨料对蓝宝石的去除速率高,表面状态好;在混合磨料的CMP实验中,和单一的SiO2磨料相比,Al2O3/SiO2混合磨料对蓝宝石的去除速率要低很多,而SiO2/CeO2混合磨料的去除速率要比单一SiO2磨料的略高一些。Abstract： In the chemical mechanical polishing （CMP） system, the abrasive is the important fac- tor to determine the removal rate and the surface state. Based on the single abrasive, the single- factor experiment was performed. Under the different pressures, speeds, flows and tempera- tures, the effects of SiO2 abrasive and Al2O3 abrasive on the sapphire removal rate and surface state were compared. And the effect of the mixed abrasive on the sapphire removal rate was stu- died. The result shows that in the single abrasive CMP experiment, when the pressure is 4 psi （1 psi= 6 894.76 Pa）, the revolving speed is 80 r/min, the flow is 7（I mL/min and the tempera- ture is 35 ℃, the sapphire removal rate is higher and the surface state is better by using the SiO2 abrasive. In the mixed, abrasive CMP experiment, the sapphire removal rate of the A1203/SIO2 mixed abrasive is much less than that of the single SiO2 abrasive, and the removal rate of the SiO2/CeO2 mixed abrasive is slightly more than that of the single SiO2 abrasive.

关 键 词：蓝宝石 化学机械抛光(CMP) 单一磨料 混合磨料 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]