Influence of channel length and layout on TID for 0.18 μm NMOS transistors  

作　　者：WU Xue LU Wu WANG Xin GUO Qi HE Chengfa LI Yudong XI Shanbin SUN Jing WEN Lin 

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences [2]Xinjiang Key Laboratory of Electronic Information Material and Device [3]Graduate University of Chinese Academy of Sciences

出　　处：《Nuclear Science and Techniques》2013年第6期17-22,共6页核技术（英文）

基　　金：Supported by National Laboratory Analog Integrated Circuit Foundation(No.9140C090402110C0906)

摘　　要：Different channel lengths and layouts on 0.18μm NMOS transistors are designed for investigating the dependence of short channel effects(SCEs)on the width of shallow trench isolation(STI)devices and designing in radiation hardness.Results show that,prior to irradiation,the devices exhibited near–ideal I–V characteristics,with no significant SCEs.Following irradiation,no noticeable shift of threshold voltage is observed,radiation–induced edge–leakage current,however,exhibits significant sensitivity on TID.Moreover,radiation–enhanced drain induced barrier lowering(DIBL)and channel length modulation(CLM)effects are observed on short–channel NMOS transistors.Comparing to stripe–gate layout,enclosed–gate layout has excellent radiation tolerance.Different channel lengths and layouts on 0.18 μm NMOS transistors are designed for investigating the dependence of short channel effects （SCEs） on the width of shallow trench isolation （STI） devices and designing in radiation hardness. Results show that, prior to irradiation, the devices exhibited near-ideal I-V characteristics, with no significant SCEs. Following irradiation, no noticeable shift of threshold voltage is observed, radiation-induced edge-leakage current, however, exhibits significant sensitivity on TID. Moreover, radiation-enhanced drain induced barrier lowering （DIBL） and channel length modulation （CLM） effects are observed on short-channel NMOS transistors. Comparing to stripe-gate layout, enclosed-gate layout has excellent radiation tolerance.

关 键 词：NMOS晶体管 沟道长度 TID 短沟道效应 辐射诱发 通道长度 沟槽隔离 特性曲线 

分 类 号：TN386[电子电信—物理电子学]