硅基底的CVD扩磷工艺研究  

CVD phosphorus doping process on silicon substrate

作　　者：杨旭[1] 何晓雄[1] 胡冰冰[1] 马志敏[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2014年第2期192-195,共4页Journal of Hefei University of Technology：Natural Science

基　　金：安徽省自然科学基金资助项目(11040606M63);安徽省高校省级自然科学研究重点资助项目(KJ2009A091)

摘　　要：文章利用化学气相沉积(CVD)扩磷的方法,在单晶硅基底上进行扩磷工艺研究。采用X射线光电子能谱分析扩磷硅基底,通过原子力显微镜观察扩磷时间和温度对硅基底表面形貌的影响,并利用半导体特性测试仪研究扩磷时间和温度对硅基底I-V特性的影响。结果表明,扩磷温度和时间对硅基底的表面粗糙度和晶粒的平均尺寸影响较大,扩磷时间越长、温度越高,硅基底的电学特性越明显。Phosphorus doping processes on single crystalline silicon substrate were studied by chemical vapour deposition（CVD） .First ,the X-ray photoelectron spectroscopy （XPS） was used to analyze the phosphorus doped silicon substrate .The influence of phosphorus doping temperature and time on the surface morphology of silicon substrate was obtained by the atomic force microscope （AFM ） .And the semiconductor characteristic tester was used to analyze the influence of phosphorus doping tempera-ture and time on the I-V property of silicon substrate .The results indicate that the phosphorus doping temperature and time influence the surface roughness and the average grain size of silicon substrate . T he time of phosphorus doping is longer ,the temperature of phosphorus doping is higher ,and the e-lectrical characteristics of silicon substrate are more obvious .

关 键 词：硅基底 扩磷工艺 表面形貌 化学气相沉积 CHEMICAL VAPOUR depo-sition(CVD) 

分 类 号：TN305.4[电子电信—物理电子学]