一种制备SiO_(2)膜的方法——氧等离子体处理聚硅烷涂层  

A METHOD OF MADE SiO_(2) THIN FILM——Polysilanes COAT WERRE TREATED WITH OXYGEN PLASMA

作　　者：谢茂浓[1] 彭志坚[2] 唐琳 傅鹤鉴[2] 

机构地区：[1]四川大学物理系,成都610064 [2]四川大学化学系,成都610064

出　　处：《四川大学学报（自然科学版）》2000年第6期873-878,共6页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(29771024).

摘　　要：作者利用低温氧等离子体处理聚硅烷涂层 ,成功地制备了SiO2 膜 由IR谱给出的Si-O键的吸收峰波数 ,随氧等离子体处理时间的不同在 10 65～ 10 88cm- 1范围变化 ;XPS谱给出Si2 p的结合能为 10 3.3～ 10 3.5eV ,硅氧原子比为 1∶1 99;激光椭园偏振仪测得折射率在 1.30～ 1.55范围 ;MOS电容的高频C V特性曲线表明 ,平带电压为正 ,计算得氧化物电荷的电性为负 ,密度为 6.6× 10 10 ～ 8.8× 10 11cm- 2 ,其大小可以通过改变处理条件进行控制 ;BT实验表明 ,可动电荷密度为 ( 3～ 6)× 10 10 cm- 2 ,这种新型的SiO2A type of SiO 2 thin films was successfully obtained in a condition of temperature less than 60℃ when polysilanec coat were treated with oxygen plasma.IR absorption peaks of these films are in 1065～1088cm -1 ,Si 2p binding energy is in 103.3～103.5eV,Si∶O=1∶1.99.The refractive index of htese films are in the range of 1.30～1.55.The C V curves of these films MOS capacitors indicated that their flatband voltage are positive,oxide charges are negative.Their densities are in the range of 6.6×10 10 ～8.8×10 11 cm -2 by calculation and they can be controlled by the condition of oxygen plasma.Mobile charges are in (3～6)×10 10 cm -2 by treatment of rhe bias temperature.The type of SiO 2 films may find a promising application in microelectronic technology.

关 键 词：聚硅烷 氧等离子体处理 SiO_(2)薄膜 氧化物电荷 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055