下一代光学掩模制造技术  

The Fabrication Technique for Next Generation Photomask

作　　者：谢常青[1] 

机构地区：[1]中国科学院微电子中心三室,北京100010

出　　处：《微电子技术》2000年第6期1-4,共4页Microelectronic Technology

摘　　要：尽管其它光刻技术在不断快速发展，然而在０．１３μｍ及０．１３μｍ以下集成电路制造水平上，光学光刻仍然具有强大的生命力。随着光学光刻极限分辨率的不断提高，当代光学掩模制造技术面临着越来越严重的挑战。本文对下一代光学掩模工艺技术的技术指标和面临的技术困难进行了论述，并对其中一些关键的技术解决方案进行了简要分析。Optical lithography will be still very strong for 0. 13um Integrated Circuits and below, even though other lithography techniques are still being developed rapidly, With the continuous improvement of optical lithography limit resolution, The current photomask fabrication technique is facing with more and more serious challenge. In this paper, The technology guideline and the technology difficulty for next generation photomask processes are discussed, and some pivotal technology resolving projects are also analysed briefly.

关 键 词：光学光刻 光学邻近效应 移相掩模 光学掩模 制造技术 

分 类 号：TN305.7[电子电信—物理电子学]