宽带隙立方氮化硼薄膜制备  

Deposition of Cubic Boron Nitride Thin Films with Wide Energy Gap

作　　者：邓金祥[1] 王波[1] 严辉[1] 陈光华[1] 

机构地区：[1]北京工业大学应用物理系,北京100022

出　　处：《Journal of Semiconductors》2001年第1期66-68,共3页半导体学报（英文版）

基　　金：国家自然科学基金! ( 6 9876 0 0 3;198740 0 7) ;北京市自然科学基金! ( 2 982 0 13) ;北京市科技新星计划和北京市科技骨干培养&&

摘　　要：报道了用偏压调制射频溅射方法制备宽带隙立方氮化硼 ( c- BN)薄膜的实验结果 .研究了衬底负偏压对制备c- BN薄膜的影响 .c- BN薄膜沉积在 p型 Si( 10 0 )衬底上 ,溅射靶为六角氮化硼 ( h- BN) ,工作气体为 Ar气和 N2 气混合而成 ,薄膜的成分由傅里叶变换红外谱标识 .结果表明 ,在射频功率和衬底温度一定时 ,衬底负偏压是影响 c-BN薄膜生长的重要参数 .在衬底负偏压为 - 2 0 0 V时得到了立方相含量在 90 %以上的 c- BN薄膜 .还给出了薄膜中的立方相含量随衬底负偏压的变化 ,并对 c-Cubic boron nitride( c- BN) thin film s were deposited on p- type Si( 10 0 ) wafers( 8— 15 Ω· cm) by Radio Frequency ( RF) sputter.The Si substrates were biased by DC voltage negatively with respect to the ground.Before deposition,the sub- strates were ultrasonically cleaned using a triple solvent procedure followed by a distilled water rinse.The targetwas the hot- pressed hexagonal boron nitride of4N purity. The working gas was the mixture of Ar and N2 with pressure of( 0 .6 6— 1.33Pa) .The films were characterized by Fourier Transform Infrared Spectroscopy( FTIR) .U nder a definite substrate tem - perature and RF power,substrate negative DC bias was an important factor that affects the form ation of c- BN.At the sub- strate negative DC bias of2 0 0 V,we obtained the c- BN film s that contained more than90 % cubic phase.It is evident thatdif- ferent substrate DC bias voltages result in different cubic phase contents in the c- BN film s and the relative content of c- BN in the thin films increases with the increase of substrate negative DC bias.

关 键 词：立方氮化硼 薄膜 射频溅射 宽带隙 

分 类 号：TN304.05[电子电信—物理电子学]