双极型器件的总剂量辐射效应与损伤机理  

Total Dose Ionizing Radiation Effect and Degradation Mechanism of Bipolar Devices

作　　者：张婷[1,2] 刘远[2,3] 李斌[1] 恩云飞 何玉娟 杨元政[3] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640 [2]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室,广东广州510610 [3]广东工业大学材料与能源学院,广东广州510006

出　　处：《核电子学与探测技术》2013年第12期1557-1562,共6页Nuclear Electronics & Detection Technology

基　　金：国家自然科学基金(61204112);中国博士后科学基金(2012M521628)

摘　　要：随着空间技术的发展,双极型器件和线性电路被广泛应用于辐射环境。从钝化层辐射损伤机理出发,介绍辐射诱生钝化层固定电荷与界面态的产生机理与计算模型,结合基极电流模型探讨双极型器件与电路的总剂量辐射效应,并针对双极型器件的低剂量率辐射损伤机理与模型展开讨论。With the development of space technology , bipolar devices and linear circuits are widely used in the radiation environment .Based on the degradation mechanism of passivation layers , this paper reviews the gener-ation mechanism and physical model of radiation -induced fixed charge and interface state in the passivation layer.Incorporating the base current model , total dose radiation effects of bipolar devices and circuits are dis-cussed .In the last section , the enhanced low dose rate effects of bipolar devices are reviewed and analysis .

关 键 词：双极型器件 总剂量辐射效应 低剂量率 

分 类 号：TN322[电子电信—物理电子学]