基于简化电阻电容电路的单粒子效应应用研究  

Single event effects applied research based on a simplified resistor-capacitor circuit

作　　者：邓全[1] 王天琦[2] 李鹏[1] 张民选[1] 肖立伊[2] 

机构地区：[1]国防科学技术大学计算机学院,湖南长沙410073 [2]哈尔滨工业大学航天学院,黑龙江哈尔滨150006

出　　处：《计算机工程与科学》2014年第3期420-425,共6页Computer Engineering & Science

基　　金：国家自然科学基金资助项目(60970036);教育部博士点基金资助项目(20124307110016)

摘　　要：随着器件尺寸缩小至纳米级,微观粒子对半导体器件的影响变得越来越明显。器件可靠性的研究近年来逐渐引起了人们的重视,开展了很多相关研究。以研究单粒子翻转效应为核心,在传统混合仿真的基础上,采用简化RC电路模型对简化电路的应用进行研究,总结了电阻和电容值变化对等效电路中敏感节点处电学特性变化的规律,探究了使用Id-Vd曲线判断单粒子翻转的准确性,提出了在研究临位翻转时,通过单次实验即可有效预测临位翻转情况的方法。根据实验所得的电压电流曲线图形特点对它们进行分类,从而判断临位翻转。通过模拟实验与预测结果比对,两者的结果相符,预测有较高准确性。As technology scales down to nanometer, the effect of microscopic particles on semicon- ductor devices becomes more and more influential. In recent years, studies of device reliability gradually attract the attention of people and a lot of researches are carried out. The paper pays attention to the effect of Single Event Upset and uses the simplified RC circuit model to study the application of simpli- fied circuit on the basis of traditional simulation. It also summarizes the law of resistance and capacitance values that changes the electrical properties at the sensitive node electrical properties of the equivalent circuit and explores the accuracy of SEU estimation using curve Id-Vd. A method of predicting the adja- cent position upset in single test is proposed. According to the characteristics of experiments＇ Id-Vd curve, a prediction can be made by classifying them. Simulation results are compared with the prediction results, proving that they are the same and the prediction is accurate and valid.

关 键 词：单粒子效应 软错误 简化电阻电容电路模型 临位翻转预测 

分 类 号：TN405[电子电信—微电子学与固体电子学]