硅纳米晶粒基MOSFET存储器的荷电特征研究  

Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

作　　者：施毅[1] 袁晓利[1] 吴军[1] 杨红官[1] 顾书林[1] 韩平[1] 郑有炓[1] 

机构地区：[1]南京大学物理系和固体微结构国家重点实验室,南京210093

出　　处：《电子学报》2001年第2期145-147,共3页Acta Electronica Sinica

基　　金：国家自然科学基金! (No .6970 60 0 4 );江苏省自然科学基金! (No.BK990 4 9)

摘　　要：本文研究了硅纳米晶粒MOSFET存储器的荷电特征 .器件阈值电压偏移达 1 8V以上 ,并随着沟道宽度的变窄而增加 ,而与沟道长度基本无关 .同时 ,阈值涨落也随宽度的变窄而增大 .在 2 0～ 30 0K测量温度范围内 ,器件阈值偏移和电荷的存储特性几乎不随温度变化 ,说明荷电过程主要由直接隧穿决定 .进一步 ,在最窄沟道器件中观察到单电荷的荷电过程 .The charging characteristics of the MOSFET memory based on Si nanocrystals with various channel dimensions are investigated in the temperature range of 20-300 K. Large threshold voltage shifts up to 1.8 V are obtained, being obviously dependent on the channel width, and independent of the channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Single electron/hole charge/discharge processes are observed in the device with the narrowest channel.

关 键 词：硅纳米晶粒 存储器 MOSFET 荷电特征 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]