深亚微米槽栅NMOSFET结构参数对其抗热载流子特性的影响  

Study on the Influence for Structure Parameters on the Hot-Carrier-Effect Immunity in NMOSFET

作　　者：任红霞[1] 郝跃[1] 许冬岗[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《电子学报》2001年第2期160-163,共4页Acta Electronica Sinica

基　　金：国防预研基金! (No.99J8.1 .1 .DZD1 32 )

摘　　要：基于流体动力学能量输运模型和幸运热载流子模型 ,用二维器件仿真软件Medici对深亚微米槽栅NMOSFET的结构参数 ,如沟道长度、槽栅凹槽拐角角度、漏源结深等 ,对器件抗热载流子特性的影响进行了模拟分析 ,并与常规平面器件的相应特性进行了比较 .结果表明即使在深亚微米范围 ,槽栅器件也能很好地抑制热载流子效应 ,且其抗热载流子特性受凹槽拐角和沟道长度的影响较显著 。The influence of structure on hot-carrier-effect immunity for deep-sub-micron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) is studied using two-dimensional device simulator Medici and compared to that of counterpart conventional planar devices. The simulated structure parameters include negative junction depth, concave corner and channel effective length. Simulation results prove that grooved-gate device can deeply suppress hot carrier effect even in deep-sub micron region. The simulations also indicate that hot-carrier effect is strongly influenced by concave corner and channel length for grooved gate MOSFET. In the end, the results obtained are explained from the point of interior physical mechanism of device.

关 键 词：槽栅NMOSFET 热载流子效应 结构参数 场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]