石墨烯晶体管的加工及测试研究  

Processing and Testing of Graphene Field-effect Transistors

作　　者：王永存[1] 薛晨阳[1] 刘耀英[1] 田学东[1] 张文栋[1] 李铁[2] 

机构地区：[1]中北大学,仪器科学与动态测试教育部重点实验室,电子测试技术重点实验室,山西太原030051 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《仪表技术与传感器》2014年第2期39-41,共3页Instrument Technique and Sensor

基　　金：国家自然科学基金项目(61127008)

摘　　要：石墨烯晶体管因其超高响应频率和超小的体积成为新一代半导体基础器件的发展趋势。针对不同结构的石墨烯晶体管在电学特性上存在差异,通过化学气相沉积法(CVD)在铜箔上生长石墨烯薄膜,转移石墨烯薄膜到Si/SiO2基底上,经过光刻、等离子体刻蚀、电子束蒸发和ALD等工艺制备出顶栅结构的石墨烯晶体管和背栅结构的石墨烯晶体管,通过测试两种结构的石墨烯晶体管,比较了顶栅结构的晶体管和背栅结构的晶体管的栅调制效果和开关比。分析得到,顶栅结构的石墨烯晶体管的栅调制效果和开关比好于背栅结构的石墨烯晶体管。Graphene field-effect transistors because of its ultra-high frequency response and ultra-small size to become the trend of next-generation semiconductor devices. Different structures graphene field-effect transistors are different in the electrical characteristics. Graphene synthesized by copper-catalyzed CVD were transferred to insulating substrate Si/SiO2. Back gate tran- sistors and top gate transistors were able to be formed by using lithography,oxygen plasma etching,electron beam evaporation and ALD, etc. Off ratio and gate modulation of graphene field-effect transistors was compared by testing. As a result, the top gate gra- phene field-effect transistors exhibit higher off ratio and better gate modulation than back gate transistors.

关 键 词：石墨烯 晶体管 氧等离子体刻蚀 狄拉克点 开关比 栅调制 

分 类 号：TN32[电子电信—物理电子学]