沉积温度对含氢非晶碳膜电学性质的影响  

EFFECTS OF DEPOSITION TEMPERATURE ON ELECTRICAL PROPERTIES OF HYDROGENATED AMORPHOUS CARBON FILMS

作　　者：程珊华[1] 宁兆元[1] 康健[1] 马春兰[1] 叶超[1] 

机构地区：[1]苏州大学物理系,苏州215006

出　　处：《物理学报》2000年第10期2041-2046,共6页Acta Physica Sinica

基　　金：江苏省自然科学基金!(批准号 :LL772 3 );江苏省教委自然科学基金资助的课题&&

摘　　要：用苯作为源气体 ,使用微波电子回旋共振 (ECR)等离子体气相沉积法在不同温度下制备了含氢非晶碳薄膜 ,研究了沉积温度对薄膜的直流电阻率、击穿场强的影响 ,发现它们与沉积速率密切相关 .测量了薄膜的含氢量与Raman谱 。Hydrogenated amorphous carbon films were deposited using ECR plasma with benzene as carbon source at varying substrate temperature. The effects of deposition temperature on the resistivity and the intensity of electric break down have been investigated. The results show these properties depend on their growth conditions. The experiment results are further investigated using Raman spectra analysis.

关 键 词：非晶碳薄膜 直流电阻 含氢 沉积温度 电学性质 

分 类 号：O484.42[理学—固体物理]