具有双n^+发射区的MCT  

MCT-With Double n^+ Emitter

作　　者：周宝霞[1] 陈治明[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《西安理工大学学报》1999年第4期39-41,55,共4页Journal of Xi'an University of Technology

摘　　要：提出一种新型的ＭＯＳ控制晶闸管结构ＤＮＭＣＴ器件。该器件同ＭＣＴ相比减弱了寄生ＪＦＥＴ效应， 并利用ＰＩＳＣＥＳ－ＩＩＢ器件模拟软件验证ＤＮＭＣＴ具有较好的正向导通电流－电压特性。该结构在一定程度上可缓解器件开关速度与导通压降之间的矛盾。A new type of device structure of MOS controlling thyristor known as DNMCT is presented in this paper. In comparison with MCT, this new device can weaken the parasitic JFET effect. PISCES IIB is employed to simulate the properties of DNMCT, thus indicating that it is characterized by the better positive turn on current voltage, and that the new structure can reduce the contradition between the switching speed and the turn on voltage drop to some certain extent.

关 键 词：发射极 MOS控制晶闸管 功率半导体管件 MCT 

分 类 号：TN73[电子电信—电路与系统]