InAs/GaAs/InP及InAs/InP自组装量子点室温PL谱的研究  

Analysis of Room Temperature PL Spectra of InAs/GaAs/InP and InAs/InP Self assembled QDs: A Five band Study

作　　者：张冶金[1] 王新强[1] 陈维友[1] 刘彩霞[1] 汪爱军[1] 杨树人[1] 刘式墉[1] 

机构地区：[1]吉林大学电子工程系,长春130023

出　　处：《吉林大学自然科学学报》2001年第1期57-60,共4页Acta Scientiarum Naturalium Universitatis Jilinensis

基　　金：国家自然科学基金 !(批准号 :6993 70 10 );国防科技重点实验室基金! (批准号 :99js36.2 .1jw130 1);吉林省青年基金! (批准号 :1999

摘　　要：用五带 k· p模型计算 In As/ Ga As/ In P及 In As/ In P的室温 PL谱的能级分布 ,分析PL谱峰值 .发现 Ga As的张应变层影响 PL峰值位置 ,与 In As/ In P量子点相比 ,In As/Ga As/ In P量子点 PL谱峰值有明显红移 。In this paper, the room temperature PL spectra of InAs self assembled dots grown on GaAs/InP and InP substrates are presented. For analyzing different positions of the PL peaks, we examined the strain tensor in these quantum dots using a valence force field model and used a five band k·p formalism to find the electronic spectra. We found that the GaAs tensile stained layer affects the position of the room temperature PL peak. The redshift of the PL peak of InAs/GaAs/InP QDs compared to that of InAs/InP QDs is explained theoretically.

关 键 词：自组装量子点 室温PL谱 能级分布 半导体 外延层 砷化铟 砷化钙 磷化铟 

分 类 号：TN304.054[电子电信—物理电子学]