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作 者:冯志良[1] 赵金玉[1] 李海涛[1] 李丽萍[1] 赵海鹏[1] 刘月清[1]
出 处:《真空科学与技术学报》2014年第4期325-328,共4页Chinese Journal of Vacuum Science and Technology
摘 要:采用四极质谱仪,对大功率速调管烘烤排气过程中残余气体进行实时检测,分析烘烤排气过程中管内件及氧化物阴极的出气规律。结果表明:烘烤排气过程中主要出现三个出气高峰,依次出现在烘烤排气温度30,75,325℃;过程中排除气体主要为H2O,并含有少量CO和H2;进入烘烤排气保温区后,出气量较小,且基本保持恒定;烘烤排气结束后,残余气体含量微少,均低于1.2×10-5 Pa,为速调管提供了较好的高真空环境。The time evolution of the partial pressures of major residual gases in a high power klystmn during thermal degassing was in-situ monitored with quadmpole mass spectroscopy. The impact of the baking temperature on the partial pressures of the major residual gases, including but not limited to H20, CO, and H2, was investigated. As the temperature increased, three distinctive pressure peaks of the residual gases were successively identified at 30,75, and 325 ℃, respec-tively,possibly because of the thermal desorption of H20,CO,and H2 from the oxide cathode of klystmn,as shown in the mass spectra. In the long-time baking stage at 450℃ ,the fairly low degassing rate remained almost constant.After cooled-down for 6 h,the pressure was estimated to be 4.3 × 10^-8 Pa,with partial pressure of the residual gases,mainly harmless CO,much lower than klystron' s critical pressure of 1.2 × 10^-5 Pa.
分 类 号:TN107[电子电信—物理电子学]
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