电子浴辅助阴极电弧源法合成AlN薄膜机理初探  

Initial Mechanism Discuss on Synthesis of AlN Thin Film by Activated Reactive Ion Plating with Cathode Arc Source Assisted by Electrons Bath

作　　者：潘俊德[1] 田林海[1] 莘海维[1] 贺琦[1] 赵晋香[1] 

机构地区：[1]太原理工大学表面工程研究所,山西太原030024

出　　处：《热加工工艺》2001年第1期5-6,共2页Hot Working Technology

基　　金：山西省青年基金资助项目!项目编号 :981 0 2 6

摘　　要：研究了电子浴辅助阴极电弧源法合成 Al N薄膜的形核生长过程 。The nucleation and growth process of AlN thin film synthesized by activated reactive ion plating with cathode arc source assisted by electrons bath was researched.At the same time,the growth mechanism of AlN thin film was initially discussed.

关 键 词：阴极电弧源法 ALN薄膜 合成 电子浴 离子镀 

分 类 号：TG174.444[金属学及工艺—金属表面处理]