超高速双层多晶硅发射极晶体管及电路  

Very High Speed Poly-Si Emitter Bipolar Transistor and Circuit

作　　者：张利春[1] 高玉芝[1] 金海岩[1] 倪学文[1] 莫邦燹[1] 宁宝俊 罗葵 叶红飞[1] 赵宝瑛[1] 张广勤 

机构地区：[1]北京大学微电子学研究所

出　　处：《Journal of Semiconductors》2001年第3期345-349,共5页半导体学报（英文版）

摘　　要：报道了双层多晶硅发射极超高速晶体管及电路的工艺研究 .这种结构是在单层多晶硅发射极晶体管工艺基础上进行了多项改进 ,主要集中在第一层多晶硅的垂直刻蚀和基区、发射区之间的氧化硅、氮化硅复合介质的 L型侧墙形成技术方面 ,它有效地减小了器件的基区面积 .测试结果表明 ,晶体管有良好的交直流特性 .在发射区面积为 3μm× 8μm时 ,晶体管的截止频率为 6 .1GHz.19级环振平均门延迟小于 40 ps,硅微波静态二分频器的工作频率为 3.2The fabrication of the very high speed polysilicon emitter bipolar transistors and circuit with double layer polysilicon has been reported.This kind of structure has been improved in many aspects compared with the single layer polysilicon emitter bipolar transistors,especially in the vertical dry etch of the first polysilicon and the technology to form the multiple dielectric layers L shaped sidewall,consisting of SiO 2 and Si 3N 4 between the base and the emitter.It effectively reduces the base area of the bipolar transistor.The good DC,AC performance and cutoff frequency of 6 1GHz have been obtained in the emitter size of 3μm×8μm.The minimum gate delay of 19 stage ECL ring oscillator is 40ps/gate and the maximum toggle frequency of a 2∶1 static divider is 3 2GHz.[KH8/9D]

关 键 词：双层多晶硅 复合介质L型侧墙 发射极晶体管 集成电路 

分 类 号：TN32[电子电信—物理电子学]