GaAs(001)薄膜表面形貌相变过程  

Surface morphologies transition processes on GaAs(001)surface

作　　者：罗子江[1,2] 周勋[1,3] 王继红[2] 郭祥[2] 王一[2] 魏文喆 丁召[2] 

机构地区：[1]贵州财经大学教育管理学院,贵阳550004 [2]贵州大学理学院,贵阳550025 [3]贵州师范大学物理与电子科学学院,贵阳550001

出　　处：《功能材料》2014年第9期88-91,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60866001);教育部博士点基金资助项目(20105201110003);贵州省科学技术基金资助项目(黔科合J字[2011]2095号;黔科合J字[2013]2114号);贵州省留学人员科技资助项目(Z103233)

摘　　要：采用STM以及RHEED技术对于GaAs(001)的表面形貌相变过程(有序平坦→无序平坦→粗糙)进行了深入研究。通过GaAs(001)在不同As BEP、不同温度的表面形貌相变过程的研究发现,As BEP和温度的变化是促使表面形貌相变发生的主要原因,高温引起原子重组致使表面重构的演变是GaAs(001)薄膜发生表面形貌相变的主要内在机制。单一表面重构或某一重构占绝对优势的表面形貌处于有序平坦状态;多种重构的非等量混合表面是无序平坦状态的主要表面形式;当表面重构难以辨别时,表面形貌也将进入岛上高岛、坑中深坑的粗糙状态。研究还观察到,当As BEP和温度足够高时,GaAs(001)表面形貌相变将不会出现无序平坦状态,表面将直接从平坦转变为粗糙状态。Surface morphology transition processes （ordered flat →disordered flat →rough）on GaAs（001）surface were studied using scanning tunneling microscope and reflection high energy electron diffraction.We found that changes of Arsenic beam equivalent pressure and temperature were the main reason of the evolution of surface morphology transition.Atoms recombination were caused by high temperature which resulting in surface reconstruction changed,which was the main internal mechanism and played key role during the process of surface morphology transition on GaAs（001）surface.The surface morphology which consists of uniform surface reconstruction or one reconstruction hold absolute majority was in the state of ordered flat;and the surface morphology which mixed by multiple reconstructions was in disordered flat;when the surface reconstruction was difficult to distinguish,which surface morphology was in rough state.During our experiments we have an interesting discovery that the state of disordered flat should disappear at the processes of surface morphology transition on GaAs（001）surface while temperature and Arsenic beam equivalent pressure were high enough.

关 键 词：STM GaAs薄膜 形貌相变 表面重构 AsBEP 

分 类 号：TN3[电子电信—物理电子学] O47[理学—半导体物理]