PECVD法制备氢化非晶硅薄膜材料  

Hydrogenated amorphous silicon p-i-n multilayer thin film deposited by PECVD

作　　者：黄仕华[1] 董晶[1] 沈佳露 刘剑[1] 

机构地区：[1]浙江师范大学数理与信息工程学院,浙江金华321004

出　　处：《浙江师范大学学报（自然科学版）》2014年第2期121-125,共5页Journal of Zhejiang Normal University:Natural Sciences

基　　金：国家自然科学基金资助项目(61076055);复旦大学应用表面物理国家重点实验室开放课题(KL2011_04)

摘　　要：采用等离子增强化学气象沉积(plasma enhanced chemical vapor deposition,PECVD)法在普通玻璃上沉积非晶硅薄膜材料.通过控制变量分别研究了p,n层的掺杂浓度、氢稀释度及i层的反应气压对薄膜材料性能的影响.结果表明:p层材料在掺杂浓度为6.67%、氢稀释度为10.6时有较高的暗电导率和较低的沉积速率;n层材料在掺杂浓度为3.33%、氢稀释度为8.3时有较高的暗电导率和较低的沉积速率;i层材料在反应气压为95 Pa、氢稀释度为15时有较高的光暗电导率之比.The amorphous silicon thin film was deposited on glass by using plasma enhanced chemical vapor deposition（PECVD）method. The influence of doping concentration and hydrogen dilution on thin film property,and the influence of reaction pressure on the i-layer property were investigated. The results indicated that the p-layer had a higher dark-conductivity and a lower deposition rate when the doping concentration and the hydrogen dilution were about 6. 67% and 10. 6,respectively. The n-layer had a higher dark-conductivity and a lower deposition rate when the doping concentration and the hydrogen dilution were about 3. 33% and 8. 3, respectively. Also the i-layer thin film had a higher photoconductivity and a dark-conductivity ratio when the reaction pressure and the hydrogen dilution were about 95 Pa and 15,respectively.

关 键 词：PECVD 非晶硅薄膜 掺杂 氢稀释度 电导率 

分 类 号：O475[理学—半导体物理]