超薄GaInP/GaInAs/Ge太阳电池研究  

Ultra-thin GaInP/GaInAs/Ge solar cells

作　　者：高伟[1] 张宝[1] 薛超[1] 高鹏[1] 王保民[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384

出　　处：《电源技术》2014年第6期1069-1070,1142,共3页Chinese Journal of Power Sources

摘　　要：通过特殊的MOCVD技术和器件工艺,应用超薄衬底和对正常衬底的减薄两种方法,成功地制作出了80 mm厚的超薄GaInP/GaInAs/Ge结构的太阳电池。对太阳电池进行了相关的测试,并对实验结果进行了分析和讨论。Through MOCVD technology and devices process and utilizing two methods including ultra-thin substrate and substrate thinning, 80 μm ultra-thin GalnP/GalnAs/Ge structure solar cells were produced. Relevant test of solar cells were conducted and the experiment results were analyzed and discussed.

关 键 词：MOCVD技术 器件工艺 GAINP GAINAS Ge太阳电池 

分 类 号：TM914[电气工程—电力电子与电力传动]