离子束溅射制备ZnO:Zn荧光薄膜  

ZnO:Zn PHOSPHOR THIN FILMS PREPARED BY ION BEAM SPUTTERING

作　　者：李炜[1] 茅东升[1] 张福民[1] 王曦[1] 柳襄怀[1] 邹世昌[1] 诸玉坤[2] 李琼[2] 徐静芳[2] 

机构地区：[1]中国科学院上海冶金研究所离子束开放研究实验室 [2]华东师范大学

出　　处：《材料研究学报》2001年第1期33-40,共8页Chinese Journal of Materials Research

基　　金：八六三计划新材料领域!863-715-008-0011;国家973规划!G200067207-2;国家自然科学基金!59972

摘　　要：用离子束溅射法制备了用于场发射显示器（ＦＥＤ）的ＺｎＯ：Ｚｎ荧光薄膜采用ＲＢＳ、ＸＲＤ、 ＡＦＭ、 Ｈａｌｌ和 ＰＬ谱等手段表征了热处理前后的薄膜 ＲＢＳ结果表明薄膜中存在一定数量的过量 Ｚｎ．沉积态的薄膜中同时含有非晶相和晶相，其表面形貌表现出多种结构 Ｈａｌｌ检测发现，升高热处理温度能降低薄膜中的自由载流子浓度，说明过量Ｚｎ含量的下降；当热处理温度超过４００℃时，Ｈａｌｌ迁移率迅速上升，表明薄膜结晶性能的改善在 ＺｎＯ：Ｚｎ薄膜的 ＰＬ谱中检测到紫外／紫光、蓝／绿光两组荧光峰，一价氧空位（Ｖｏ）充当了蓝／绿光的发光中心薄膜的光致发光强度受热处理温度的影响很大，可能的原因包括薄膜结构缺陷的修复、成分均匀化和过量 Ｚｎ的蒸发。ZnO:Zn phosphor thin films used in field emission displays (FEDs) were prepared by ion beam sputtering. Post-deposition annealing of these films was performed in temperature range of 100-1000°C in N2 atmosphere. Several techniques, including RBS, XRD, AFM, Hall effect measurement and PL spectra, were employed to characterize these films. RBS results showed an excess of Zn in the films. The as-deposited films were found to contain both amorphous and crystalline phases. It was found that the free carrier concentration in these films decreased with increasing annealing temperature, indicating the elimination of excess Zn. Meanwhile, the Hall mobility increased quickly if the annealing temperature exceeded 400°C, showing the improved crystallinity. Two categories of photoluminescent peaks, UV/violet and blue/green, was detected in ZnO:Zn films. The singly ionized oxygen vacancies (V'o) are responsible for the visible luminescence which was strongly affected by the annealing processes. The possible reasons include recovery of structural defects, homogenization of the films, and evaporation of the excess Zn with different contributions in different temperature ranges.

关 键 词：荧光薄膜 热处理 光致发光 场发射显示器 氧化锌 离子束溅射 

分 类 号：TN104.3[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]