gGaS_2单晶生长与完整性研究  

Study on Crystal Growth and Integrality of AgGaS_2

作　　者：朱兴华[1] 赵北君[1] 朱世富[1] 于丰亮[1] 邵双运[1] 宋芳[1] 高德友[1] 蔡力[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2001年第1期63-66,共4页Journal of Synthetic Crystals

基　　金：四川省应用基础研究资助

摘　　要：采用二温区气相输运温度振荡方法合成了高纯单相致密的AgGaS2 多晶 ,计算出晶格常数a=5.7535nm ,c =10 .30 0 8nm ,以及S原子位置x =0 .2 79,与PDF值相差很小 ,表明其是高质量的多晶原料。以此为原料用改进Bridgman法生长出直径 15mm长度 30mm的单晶体 ,经外形观测、解理试验和X射线衍射分析表明其是结晶完整的单晶体。High pure AgGaS 2 polycrystal of single phase and high density has been synthesized by two zone vapor transporting and temperature oscillating method.The lattice constant and the location of S atom were calculated to be a =5.753nm, c =10.3008nm and x =0.279,with little discrepancy comparing to PDF value,which showed the high quality of our synthesized polycrystal.Single crystal with 15mm in diameter and 30mm in length has also been grown by modified Bridgman method.By observation on appearance,X ray diffractin on cleavage faces,it showed that the crystal is crystallized with good integrality.

关 键 词：AGGAS2 多晶合成 单晶生长 二温区气相输运温度振荡方法 改进Bridgman法 结晶完整性 

分 类 号：O781[理学—晶体学]