MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices  

作　　者：Geng Wang Lu Wang Hong Chen Wenxin Wang Zhenwu Shi Yulong Chen Miao He Pingyuan Lu Weining Qian 

机构地区：[1]Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University [2]Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences

出　　处：《Chinese Science Bulletin》2014年第20期2383-2386,共4页

基　　金：supported by the National High Technology Research and Development Program of China (2011AA03A112, 2011AA03A106 and 2013AA03A101);the National Natural Science Foundation of China (11204360, 61210014);the Science & Technology Innovation Program of Guangdong Provincial Department of Education of China (2012CXZD0017);the Industry-Academia-Research Union Special Fund of Guangdong Province of China (2012B091000169);the Science & Technology Innovation Platform of Industry-AcademiaResearch Union of Guangdong Province-Ministry Cooperation Special Fund of China (2012B090600038)

摘　　要：Two kinds of short-period type II superlattices(SLs)InAs(6 monolayers(MLs))/GaSb(3 MLs)and InAs(8 MLs)/GaSb(8 MLs)which can serve for mid-infrared(MIR)detection have been grown by molecular beam epitaxy(MBE)on p-type GaSb(100)substrates.The cutoff wavelength for the two superlattices(SLs)was found to be around 4.8 lm at 300 K.The high resolution X-ray diffraction(HRXRD)measurements indicated that the InAs(8 MLs)/GaSb(8 MLs)SLs have better crystalline quality than that of the InAs(6 MLs)/GaSb(3 MLs)SLs.However,compared with infrared absorption in the 2.5–4.3 lm range,the optical absorption of InAs(6 MLs)/GaSb(3MLs)SLs was more excellent.This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.Two kinds of short-period type II superlattices （SLs） InAs （6 monolayers （MLs））/GaSb （3 MLs） and InAs （8 MLs）/GaSb （8 MLs） which can serve for mid-infrared （MIR） detection have been grown by molecular beam epitaxy （MBE） on p-type GaSh （100） substrates. The cutoff wavelength for the two superlattices （SLs） was found to be around 4.8 μm at 300 K. The high resolution X-ray diffraction （HRXRD） measurements indicated that the InAs （8 MLs）/GaSb （8 MLs） SLs have better crystalline quality than that of the InAs （6 MLs）/GaSb （3 MLs） SLs. How-ever, compared with infrared absorption in the 2.5-4.3μm range, the optical absorption of InAs （6 MLs）/GaSb （3 MLs） SLs was more excellent. This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.

关 键 词：分子束外延生长 锑化镓 超晶格 砷化铟 中红外 高吸收 MLS InAs 

分 类 号：O614.37[理学—无机化学]